导师姓名：刘杰
性别：
人气指数：44

所属院校：湖南大学
所属院系：电气与信息工程学院
职称：
导师类型：博导
招生专业：
研究领域： 1.半导体工艺与器件的计算与设计（TCAD）2.亚10纳米（sub-10nm）半导体芯片工... [展开]


研究领域： 1.半导体工艺与器件的计算与设计（TCAD）2.亚10纳米（sub-10nm）半导体芯片工艺与器件技术3.基于超大规模并行计算的计算纳米技术（ComputationalNanotechnology） [收起]




通讯方式 :
电子邮件：jie_liu@hnu.edu.cn, jie.liu@ieee.org


个人简述 :
刘杰，男，汉族，1984年出生于湖南浏阳。 现任湖南大学电气与信息工程学院电子工程系教授、博导。

科研工作 :
学术论文——[1]Jie Liu, Mengchao Shi, Jiwu Lu, M. P. Anantram, “Electrical Control of Magnetism in CrI3 monolayer”, 2017 (submitted).[2]Jie Liu, “Microscopic origin of electron transport properties and ultra-scalability of amorphous semiconductors”, IEEE Transactions on Electron Devices, vol. 64, pp. 2207 - 2215, 2017. Link: https://doi.org/10.1109/TED.2017.** [3]Jie Liu, “A Multi-Scale Analysis of the Impact of Pressure on Melting of Crystalline Phase Change Material Germanium Telluride”, Appl. Phys. Lett. 105, 173509, 2014. Link: http://dx.doi.org/10.1063/1.** [4]X. Xu, Jie Liu, M. P. Anantram, “Conduction in Alumina with Atomic Scale Copper Filaments”, J. Appl. Phys. 116, 163701, 2014. Link: http://dx.doi.org/10.1063/1.** [5]Jie Liu, X. Xu, L. Brush, M. P. Anantram, “A multi-scale analysis of the crystallization of amorphous germanium telluride using ab initio simulations and classical crystallization theory”, Journal of Applied Physics, 115, 023513, 2014. Link: http://dx.doi.org/10.1063/1.** [6]Jie Liu, X. Xu, M. P. Anantram, “Subthreshold Electron Transport Properties of Ultrascaled Phase Change Memory”, IEEE Electron Device Letters, 35 (5), 533-535, 2014. Link: http://dx.doi.org/10.1109/LED.2014.** [7]Jie Liu, X. Xu, M. P. Anantram, “Role of inelastic electron–phonon scattering in electron transport through ultra-scaled amorphous phase change material nanostructures”, Journal of Computational Electronics, vol. 13, issue 3, pp. 620-626, 2014. Link: http://dx.doi.org/10.1007/s10825-014-0579-7 [8]Jie Liu, “Multiscale simulation of phase change memory”, PhD thesis, Univ. of Washington, Seattle, WA, USA, 2013. Link: http://hdl.handle.net/1773/25134 [9]Jie Liu, M. P. Anantram, “Low-bias electron transport properties of germanium telluride ultrathin films”, Journal of Applied Physics, 113, 063711, 2013. Link: http://dx.doi.org/10.1063/1.** [10]Jie Liu, Bin Yu, M.P. Anantram, “Scaling analysis of nanowire phase change memory”, IEEE Electron Device Letters, vol. 32, pp. 1340-1342, 2011. Link: http://dx.doi.org/10.1109/LED.2011.** [11]Jie Liu, Jun Zou, Jihuan Tian, Jiansheng Yuan, “Analysis of Electric Field, Ion Flow Density and Corona Loss of Same-Tower Double-Circuit HVDC lines Using Improved FEM”, IEEE Transactions on Power Delivery, vol. 24, pp. 482-483, 2009. Link: http://dx.doi.org/10.1109/TPWRD.2008.** [12]J Tian, J Zou, Y Wang, Jie Liu, J Yuan, Y Zhou, “Simulation of bipolar charge transport with trapping and recombination in polymeric insulators using Runge–Kutta discontinuous Galerkin method”, Journal of Physics D: Applied Physics 41 (19), 195416, 2008. Link: http://dx.doi.org/10.1088/0022-3727/41/19/195416 [13]Jihuan Tian, Jun Zou, Jie Liu, Jiasehng Yuan, “Calculation of total electric field and ionic current density of double-circuit HVDC transmission lines”, Power System Technology 32 (2), 2008. Link: http://www.dwjs.com.cn/EN/Y2008/V32/I2/61 [14]D Chen, Z Huang, Jie Liu, C Mao, B Zhang, “Calculation of current field due to point source in multi-layer soil”, High Voltage Engineering, Vol. 34, pp. 1379-1382, 2008.Link: http://en.cnki.com.cn/Article_en/CJFDTOTAL-GDYJ**.htm [15]V. Moroz, L. Smith, J. Huang, M. Choi, T. Ma, Jie Liu, Y. Zhang, X.W. Lin, J. Kawa, Y. Saad, “Modeling and Optimization of Group IV and III-V FinFETs and Nano-Wires”, IEEE Intl. Electron Devices Meeting (IEDM) 2014.[16]Jie Liu, X Xu, MP Anantram, “Ab Initio Study of the Sub-threshold Electron Transport Properties of Ultra-scaled Amorphous Phase Change Material Germanium Telluride”, Material Research Society Spring Meeting, San Francisco, CA, USA, 2014.

教育背景 :
1.2009年9月至2013年12月，就读于美国华盛顿大学（University of Washington）电子工程系，获电子工程专业博士学位（PhD, Electrical Engineering）2.2009年9月至2011年12月，就读于美国华盛顿大学（University of Washington）应用数学系，获应用数学专业理学硕士学位（Master of Science, Applied Mathematics）3.2006年8月至2009年1月，就读于中国清华大学电机工程与应用电子技术系，获电气工程及其自动化专业工学硕士学位。4.2002年8月至2006年6月，就读于中国华中科技大学电气与电子工程学院，获电气工程及其自动化专业工学学士学位。5.2002年8月至2006年6月，就读于中国华中科技大学计算机科学与技术学院，获计算机科学与技术专业工学双学士学位。